rev. 2.4 page 1 2009-11-10 sipmos ? power transistor ? n channel ? enhancement mode ? avalanche-rated ? logic level pin 1 pin 2 pin 3 g d s type v ds i d r ds(on ) package pb-free buz 73 al h 200 v 5.5 a 0.6 pg-to 220-3 yes maximum ratings parameter symbol values unit continuous drain current t c = 37 ?c i d 5.5 a pulsed drain current t c = 25 ?c i dpuls 22 avalanche current,limited by t jmax i ar 7 avalanche energy,periodic limited by t jmax e ar 6.5 mj avalanche energy, single pulse i d = 7 a, v dd = 50 v, r gs = 25 l = 3.67 mh, t j = 25 ?c e as 120 gate source voltage v gs 20 v esd-sensitivity hbm as per mil-std 883 class 1 power dissipation t c = 25 ?c p tot 40 w operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip case r thjc 3.1 k/w thermal resistance, chip to ambient r thja 75 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 buz 73al h
buz 73al h rev. 2.4 page 2 2009-11-10 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 c v (br)dss 200 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 200 v, v gs = 0 v, t j = 25 c v ds = 200 v, v gs = 0 v, t j = 125 c i dss - - 10 0.1 100 1 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-resistance v gs = 5 v, i d = 3.5 a r ds(on) - 0.5 0.6 w
buz 73al h rev. 2.4 page 3 2009-11-10 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 3.5 a g fs 5 6.5 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 630 840 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 120 200 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 60 90 turn-on delay time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t d(on) - 15 20 ns rise time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t r - 60 90 turn-off delay time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t d(off) - 100 130 fall time v dd = 30 v, v gs = 5 v, i d = 3 a r gs = 50 w t f - 40 50
buz 73al h rev. 2.4 page 4 2009-11-10 electrical characteristics, at t j = 25c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - 5.5 a inverse diode direct current,pulsed t c = 25 c i sm - - 22 inverse diode forward voltage v gs = 0 v, i f = 14 a v sd - 1.1 1.7 v reverse recovery time v r = 100 v, i f = l s, d i f /d t = 100 a/s t rr - 140 - ns reverse recovery charge v r = 100 v, i f = l s, d i f /d t = 100 a/s q rr - 0.7 - c
buz 73al h rev. 2.4 page 5 2009-11-10 power dissipation p tot = | ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 30 35 w 45 p tot drain current i d = | ( t c ) parameter: v gs 3 5 v 0 20 40 60 80 100 120 c 160 t c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 a 6.0 i d safe operating area i d = | ( v ds ) parameter: d = 0.01 , t c = 25c -1 10 0 10 1 10 2 10 a i d 10 0 10 1 10 2 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 24.0s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
buz 73al h rev. 2.4 page 6 2009-11-10 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s 0 2 4 6 8 10 12 v 16 v ds 0 1 2 3 4 5 6 7 8 9 10 11 a 13 i d v gs [v] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 5.5 i i 6.0 j j 7.0 k k 8.0 l p tot = 40w l 10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: v gs 0.0 1.0 2.0 3.0 4.0 5.0 6.0 a 7.5 i d 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 w 1.8 r ds (on) v gs [v] = a 2.0 v gs [v] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 7.0 j j 8.0 k k 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 1 2 3 4 5 6 7 8 v 10 v gs 0 2 4 6 8 10 12 14 a 18 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0 2 4 6 8 10 12 a 15 i d 0 1 2 3 4 5 6 7 8 9 10 s 12 g fs
buz 73al h rev. 2.4 page 7 2009-11-10 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 3.5 a, v gs = 5 v -60 -20 20 60 100 c 160 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 1.9 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs = 0v, f = 1mhz 0 5 10 15 20 25 30 v 40 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -1 10 0 10 1 10 2 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
buz 73al h rev. 2.4 page 8 2009-11-10 avalanche energy e as = | ( t j ) parameter: i d = 7 a, v dd = 50 v r gs = 25 w , l = 3.67 mh 20 40 60 80 100 120 c 160 t j 0 10 20 30 40 50 60 70 80 90 100 110 mj 130 e as typ. gate charge v gs = | ( q gate ) parameter: i d puls = 63 a 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 v 16 v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 c 160 t j 180 185 190 195 200 205 210 215 220 225 230 v 240 v (br)dss
buz 73al h
buz 73al h published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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